Working Student: Design of Frequency Upconverter in CMOS Technology for D-band Applications
Fraunhofer Institute for Photonic Microsystems IPMS
2025-12-09
Dresden
City: Dresden
Date: Dec 9, 2025
Working Student: Design of Frequency Upconverter in CMOS Technology for D-band Applications
The Fraunhofer-Gesellschaft (www.fraunhofer.com) is one of the world's leading organizations for application-oriented research. 75 institutes develop pioneering technologies for our economy and society - more precisely: 32 000 people from technology, science, administration and IT. They know: Anyone who comes to Fraunhofer wants to and can make a difference. For themselves, for us and for the markets of today and tomorrow.
Developing innovative technology solutions and bringing them to application - that is our goal at the Fraunhofer Institute for Photonic Microsystems IPMS. With our expertise in the development of photonic microsystems, related technologies including nanoelectronics and wireless communication solutions, we create - in flexible and interdisciplinary teams - technologies for innovative products in a wide range of markets such as automotive, industrial and aerospace.
The research focus is design and implementation of a high performance frequency upconverter in 22-nm FDSOI CMOS technology targeting D-band (110 - 170 GHz) applications. The key milestone is to develop a suitable circuit architecture including the key components such as mixer and frequency multiplier. This position is to support the RF design team at CNT on the design level.
Be part of change
- Frequency upconverter design for D-Band applications: You design and optimize frequency upconverters in 22-nm FDSOI CMOS technology, targeting high performance and reliability for D-band (110-170 GHz) applications.
- Circuit analysis and optimization: You analyze and optimize circuit components using advanced simulation tools such as Cadence Virtuoso to ensure efficient functionality and robust design.
- Electromagnetic simulation: You perform electromagnetic simulations of the circuit layout using Ansys HFSS or PathWave ADS to optimize the design's performance
- Layout preparation for fabrication: You create detailed layouts for fabrication, adhering to design specifications and ensuring manufacturability and compliance with foundry requirements.
- Design-rule checking (DRC) and LVS validation: You conduct comprehensive design-rule checking (DRC) and layout vs. schematic (LVS) validation to ensure the layout aligns with the foundry's rules and the schematic design.
The tasks can also be implemented as part of a master's thesis.
What you contribute
- Academic Background: You have an academic foundation in Electrical Engineering with a focus on RF engineering. Knowledge of transistor technologies, system-level design, and RF circuit simulation is highly desirable.
- Technical Skills: You possess practical experience with advanced circuit simulation software, including electromagnetic (EM) simulation tools such as ANSYS HFSS and PathWave ADS. A solid understanding of RF design and the ability to quickly grasp new theories and concepts from literature are essential.
- Problem-Solving: You demonstrate resilience and a structured approach to debugging and resolving issues in simulations. Patience, perseverance, and readiness to test multiple solutions and design iterations are critical qualities.
- Creativity and Flexibility: You actively contribute original ideas based on your expertise and promote them for further discussion. You balance creativity with flexibility, following conventional approaches when directed by supervisors.
- Fast Learning Ability: You are capable of quickly understanding new theories and concepts from literature, adapting them effectively to your work.
- Communication Skills: You listen attentively to feedback and suggestions from supervisors and respond thoughtfully and constructively to drive project success.
- Language Skills: You are proficient in written and spoken English (C2 level) and possess basic German language skills to support effective collaboration.
What we offer
We offer you an exciting task and valuable insights into the methods and procedures of a modern high-tech research institute. A motivated and dynamic team awaits you in a very well-equipped research and development environment. In addition, we offer you connecting points in the context of your studies or your career entry, e.g. a topic for your thesis or the beginning of your career at Fraunhofer IPMS. We will support you!
The weekly working time is a maximum of 20 hours and is to be coordinated flexibly. The position is initially limited for 1 year. A long-term collaboration is strived. We value and promote the diversity of our employees' skills and therefore welcome all applications - regardless of age, gender, nationality, ethnic and social origin, religion, ideology, disability, sexual orientation and identity. Severely disabled persons are given preference in the event of equal suitability. Our tasks are diverse and adaptable - for applicants with disabilities, we work together to find solutions that best promote their abilities. Remuneration according to the federal government guidelines for intern salaries.
With its focus on developing key technologies that are vital for the future and enabling the commercial utilization of this work by business and industry, Fraunhofer plays a central role in the innovation process. As a pioneer and catalyst for groundbreaking developments and scientific excellence, Fraunhofer helps shape society now and in the future.
Ready for a change? Then apply now and make a difference! Once we have received your online application, you will receive an automatic confirmation of receipt. We will then get back to you as soon as possible and let you know what happens next.
Contact
Mr. Eric Graebe
Human Resources
Phone: +49 (0)351 8823 1505
Human Resources
Phone: +49 (0)351 8823 1505
Mr. Dr. Quang Huy Le
Specialty Department
Phone: +49 (0)351 2607 3213
Specialty Department
Phone: +49 (0)351 2607 3213
Fraunhofer Institute for Photonic Microsystems IPMS
Requisition Number: 82117
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